Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSA812
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -100 mA
P
C
Collector Power Dissipation 150 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= -60V, I
E
=0 -0.1 µA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
=0 -0.1 µA
h
FE
DC Current Gain V
CE
= -6V, I
C
= -1mA 90 200 600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -100mA, I
B
= -10mA -0.18 -0.3 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -6V, I
C
= -1mA -0.55 -0.62 -0.65 V
f
T
Current Gain Bandwidth Product V
CE
= -6V, I
C
= -10mA 180 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1MHz 4.5 pF
Classification O Y G L
h
FE
90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600
1. Base 2. Emitter 3. Collector
KSA812
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC1623
D1O
Marking
h
FE
grade
SOT-23
1
2
3