Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2328A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 2 A
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=10mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=1mA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 100 nA
h
FE
DC Current Gain V
CE
=2V, I
C
=500mA 100 320
V
BE
(on) Base-Emitter On Voltage V
CE
=2V, I
C
=500mA 1.0 V
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=1.5A, I
B
=0.03A 2.0 V
f
T
Current Gain Bandwidth Product V
CE
=2V, I
C
=500mA 120 MHz
C
ob
Collector Output Capacitance V
CB
=10V,I
E
=0, f=1MHz 30 pF
Classification O Y
h
FE
100 ~ 200 160 ~ 320
KSC2328A
Audio Power Amplifier Applications
Complement to KSA928A
Collector Power Dissipation : P
C
=1W
3 Watt Output Application
TO-92L
1
1. Emitter 2. Collector 3. Base

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