Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
KSC2334
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 150 V
V
CEO
Collector-Emitter Voltage 100 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current (DC) 7 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current (DC) 3.5 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
Collector Dissipation (T
A
=25°C) 1.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage I
C
= 5A, I
B1
= 0.5A, L = 1mH 100 V
V
CEX
(sus)1 Collector-Emitter Sustaining Voltage I
C
= 5A, I
B1
= -I
B2
= 0.5A
V
BE
(off) = -5V, L = 180µH, Clamped
100 V
V
CEX
(sus)2 Collector-Emitter Sustaining Voltage I
C
= 10A, I
B1
=1A, I
B2
= -0.5A,
V
BE
(off) = -5V, L = 180µH, Clamped
100 V
I
CBO
Collector Cut-off Current V
CB
= 100, I
E
= 0 10 µA
I
CER
Collector Cut-off Current V
CE
= 100V, R
BE
= 51Ω@T
C
=125°C 1mA
I
CEX1
I
CEX2
Collector Cut-off Current V
CE
= 100V, V
BE
(off) = -1.5V
V
CE
= 100V, V
BE
(off) = -1.5V
@ T
C
= 125°C
10
1
µA
mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 µA
h
FE1
h
FE2
h
FE3
* DC Current Gain V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 5A
40
40
20
240
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 5A, I
B
= 0.5A 0.6 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 5A, I
B
= 0.5A 1.5 V
t
ON
Turn On Time V
CC
= 50V, I
C
= 5A
I
B1
= -I
B2
= 0.5A
R
L
= 10Ω
0.5 µs
t
STG
Storage Time 0.5 µs
t
F
Fall Time 1.5 µs
Classification R O Y
h
FE2
40 ~ 80 70 ~ 140 120 ~ 240
KSC2334
High Speed Switching Industrial Use
• Complement to KSA1010
1.Base 2.Collector 3.Emitter
1
TO-220