Datasheet

KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5402D/KSC5402DT Rev. C0 1
December 2009
KSC5402D/KSC5402DT
NPN Silicon Transistor, Planar Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics T
A
=25°C unless otherwise noted
* Mounted on 1” square PCB (FR4 ro G-10 Material)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 1000 V
V
CEO
Collector-Emitter Voltage 450 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current (DC) 2 A
I
CP
*Collector Current (Pulse) 5 A
I
B
Base Current (DC) 1 A
I
BP
*Base Current (Pulse) 2 A
P
C
Power Dissipation(T
C
=25°C) : D-PAK*
: TO-220
30
50
W
W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 to 150 °C
Symbol Parameter Rating Units
TO-220 D-PAK
R
θJC
Thermal Resistance Junction to Case 2.5 4.17* °C/W
R
θJA
Junction to Ambient 62.5 50 °C/W
T
L
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
270 270 °C
C
B
E
Equivalent Circuit
1
1.Base 2.Collector 3.Emitter
1
D-PAK
TO-220