Datasheet

KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5603D Rev. C2 1
February 2010
KSC5603D
NPN Silicon Transistor, Planar Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 1600 V
V
CEO
Collector-Emitter Voltage 800 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current (DC) 3 A
I
CP
*Collector Current (Pulse) 6 A
I
B
Base Current (DC) 2 A
I
BP
*Base Current (Pulse) 4 A
P
C
Power Dissipation(T
C
=25°C) 100 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 to +150 °C
Symbol Parameter Rating Units
R
θJC
Thermal Resistance
Junction to Case 1.25 °C/W
R
θJA
Junction to Ambient 80 °C/W
T
L
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
270 °C
1.Base 2.Collector 3.Emitter
1
TO-220
C
B
E
Equivalent Circuit