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KSH122 / KSH122I — NPN Silicon Darlington Transistor

KSH122 / KSH122I Rev. 1.1.0 1

November 2013

KSH122 / KSH122I

NPN Silicon Darlington Transistor

Features

• D-PAK for Surface Mount Applications

• High DC Current Gain

• Built-in Damper Diode at E-C

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “ - I ” Suffix)

• Electrically Similar to Popular TIP122

• Complement to KSH127

Applications

• Switching Regulators

• Converters

• Power Amplifiers

Ordering Information

Part Number Top Mark Package Packing Method

KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122ITU KSH122-I TO-251 3L (IPAK) Rail

Description

Designed for general-purpose power and switching, such

as output or driver stages in applications.

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Equivalent Circuit

R1 8kΩ≅

R2 0.12kΩ≅

Summary of content (7 pages)

PAGE 1
KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
PAGE 3
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[μs], TURN ON TIME Cob[pF], CAPACITANCE VCC= 30V IC=250IB IB1=-IB2 100 10 1 0.1 1 10 1 tR tD, VBE(off)=0 0.1 0.01 0.
PAGE 4
KSH122 / KSH122I — NPN Silicon Darlington Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2002 Fairchild Semiconductor Corporation KSH122 / KSH122I Rev. 1.1.0 www.fairchildsemi.
PAGE 5
KSH122 / KSH122I — NPN Silicon Darlington Transistor Physical Dimensions TO-252 3L Figure 7. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
KSH122 / KSH122I — NPN Silicon Darlington Transistor Physical Dimensions (Continued) TO-251 3L D) TO251A03REVA. Figure 8. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.