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KSH200 — NPN Epitaxial Silicon Transistor

KSH200 Rev. B0 1

August 2010

KSH200

NPN Epitaxial Silicon Transistor

Features

• D-PAK for Surface Mount Applications

• High DC Current Gain

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “ - I “ Suffix)

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Electrical Characteristics T

= 25°C unless otherwise noted

* Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2% Pulsed

Symbol Parameter Value Units

CBO

Collector-Base Voltage 40 V

CEO

Collector-Emitter Voltage 25 V

EBO

Emitter-Base Voltage 8 V

Collector Current (DC) 5 A

Collector Current (Pulse) 10 A

Base Current 1 A

Collector Dissipation (T

= 25°C) 12.5 W

Collector Dissipation (T

= 25°C) 1.4 W

Junction Temperature 150 °C

STG

Storage Temperature -55 to 150 °C

Symbol Parameter Conditions Min. Max. Units

CEO

(sus) * Collector Emitter Sustaining Voltage I

= 100mA, I

= 0 25 V

CBO

Collector Cut-off Current V

= 40V, I

= 0 100 nA

EBO

Emitter Cut-off Current V

= 8V, I

= 0 100 nA

* DC Current Gain V

= 1V, I

= 500mA

= 1V, I

= 2A

= 2V, I

= 5A

180

(sat) * Collector-Emitter Saturation Voltage I

= 500mA, I

= 50mA

= 2A, I

= 200mA

= 5A, I

= 1A

0.3

0.75

1.8

(sat) * Base-Emitter Saturation Voltage I

= 5A, I

= 1A 2.5 V

(on) * Base-Emitter On Voltage V

= 1V, I

= 2A 1.6 V

Current Gain Bandwidth Product V

= 10V, I

= 100mA 65 MHz

Output Capacitance V

= 10V, I

= 0, f = 0.1MHz 80 pF

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (6 pages)

PAGE 1
KSH200 NPN Epitaxial Silicon Transistor Features • • • • D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base Absolute Maximum Ratings I-PAK 1 2.Collector 3.
PAGE 2
10 VCE(sat), VBE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 100 VCE=2V VCE=1V 10 1 0.01 0.1 1 10 IC=10IB VBE(sat) 1 sat) V CE( 0.1 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1000 tR,tD[ns], TURN ON TIME Cob[pF], CAPACITANCE VCC=30V IC=10IB 100 10 1 0.1 1 10 1 tR 0.1 tD 0.01 0.01 100 VCB[V], COLLECTOR BASE VOLTAGE 100 0.
PAGE 3
KSH200 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) 20.0 PC[W], POWER DISSIPATION 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2010 Fairchild Semiconductor Corporation KSH200 Rev. B0 www.fairchildsemi.
PAGE 4
KSH200 — NPN Epitaxial Silicon Transistor Physical Dimensions D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.
PAGE 5
KSH200 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.50 ±0.10 ±0.20 6.10 ±0.20 (0.50) 0.70 (4.34) 0.76 ±0.10 2.30TYP [2.30±0.20] ±0.30 16.10 ±0.20 ±0.30 9.30 MAX0.96 1.80 0.80 ±0.10 0.60 ±0.20 (0.50) 0.50 ±0.10 2.30TYP [2.30±0.20] Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation KSH200 Rev. B0 www.fairchildsemi.
PAGE 6
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