Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH210
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 40 V
V
CEO
Collector-Emitter Voltage - 25 V
V
EBO
Emitter-Base Voltage - 8 V
I
C
Collector Current (DC) - 5 A
I
CP
Collector Peck Current (Pulse) - 10 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
= 25°C) 12.5 W
Collector Dissipation (T
a
= 25°C) 1.4 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= - 10mA, I
B
= 0 -25 V
I
CBO
Collector Cut-off Current V
CB
= - 40V, I
E
= 0 -100 nA
I
EBO
Emitter Cut-off Current V
EBO
= - 8V, I
C
= 0 -100 nA
h
FE
* DC Current Gain V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
70
45
10
180
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 500mA, I
B
= - 50mA
I
C
= - 2A, I
B
= - 200mA
I
C
= - 5A, I
B
= - 1A
-0.3
-0.75
-1.8
V
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 1A -2.5 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= - 1V, I
C
= - 2A -1.6 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= - 100mA 65 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0, f = 0.1MHz 120 pF
KSH210
D-PAK for Surface Mount Applications
• High DC Current Gain
• Low Collector Emitter Saturation Voltage
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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