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KSH45H11 — PNP Epitaxial Silicon Transistor

KSH45H11 Rev. 1.2.0 1

November 2013

KSH45H11

PNP Epitaxial Silicon Transistor

Features

• Lead Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular KSE45H

• Fast Switching Speeds

• Low Collector Emitter Saturation Voltage

Applications

• Switching Regulators

• Converters

• Power Amplifiers

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

KSH45H11TF KSH45H11 TO-252 3L (DPAK) Tape and Reel

KSH45H11TM KSH45H11 TO-252 3L (DPAK) Tape and Reel

KSH45H11ITU KSH45H11-I TO-251 3L (IPAK) Rail

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -80 V

EBO

Emitter-Base Voltage -5 V

Collector Current (DC) -8 A

Collector Current (Pulse) -16 A

Collector Dissipation (T

= 25°C) 20 W

Collector Dissipation (T

= 25°C) 1.75 W

Junction Temperature 150 °C

STG

Storage Temperature -55 to 150 °C

Description

General-purpose power and switching such as output or

driver stages in applications D-PAK for surface mount

applications.

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (6 pages)

PAGE 1
KSH45H11 PNP Epitaxial Silicon Transistor Features Description • • • • • General-purpose power and switching such as output or driver stages in applications D-PAK for surface mount applications. Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage Applications • Switching Regulators • Converters • Power Amplifiers D-PAK 1 1.Base I-PAK 1 2.Collector 3.
PAGE 2
Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Conditions Collector-Emitter Sustaining Voltage IC = -30 mA, IB = 0 Min. Typ. Max. -80 Unit V ICEO Collector Cut-Off Current VCE = -80 V, IB = 0 -10 μA IEBO Emitter Cut-Off Current VBE = -5 V, IC = 0 -50 μA hFE DC Current Gain -1 V VCE = -1 V, IC = -2 A 60 VCE = -1 V, IC = -4 A 40 VCE(sat) Collector-Emitter Saturation Voltage IC = -8 A, IB = -0.
PAGE 3
-100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = -1V 100 10 ICP(max) 10 0μ s 50 0μ s -10 IC(max) 1m s 5m s DC -1 -0.1 -0.01 1 -0.01 -0.1 -1 -1 -10 IC[A], COLLECTOR CURRENT -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC Current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2002 Fairchild Semiconductor Corporation KSH45H11 Rev.
PAGE 4
KSH45H11 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-252 3L Figure 4. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 5
KSH45H11 — PNP Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-251 3L D) TO251A03REVA. Figure 5. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
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