Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST05/06
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking Code
Symbol Parameter Value Units
V
CBO
Collecto-Base Voltage
: KST05
: KST06
60
80
V
V
V
CEO
Collector-Emitter Voltage
: KST05
: KST06
60
80
V
V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
R
TH
(j-a) Thermal Resistance junction to Ambient 357 °C/W
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
I
C
=1mA, I
B
=0 60
80
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 4 V
I
CBO
Collector Cut-off Current
: KST05
: KST06
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0 0.1
0.1
µA
µA
I
CEO
Collector Cut-off Current V
CE
=60V, I
B
=0 0.1 µA
h
FE
DC Current Gain V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
50
50
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=100mA, I
B
=10mA 0.25 V
V
BE
(on) Base-Emitter On Voltage V
CE
=1V, I
C
=100mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
=2V, I
C
=100mA, f=100MHz 100 MHz
Type KST05 KST06
Mark 1H 1G
KST05/06
Driver Transistor
• Collector-Emitter Voltage: V
CEO
= KST05: 60V
KST06: 80V
• Collector Power Dissipation: P
C
(max) = 350mW
• Complement to KST55/56
1H
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3