Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST10
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
• Refer to KSP10 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 3 V
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
R
TH
(j-a) Thermal Resistance junction to Ambient 357 °C/W
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 3 V
I
CBO
Collector Cut-off Current V
CB
=25V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
BE
=2V, I
C
=0 100 nA
h
FE
DC Current Gain V
CE
=10V, I
C
=4mA 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=4mA, I
B
=0.4mA 0.5 V
V
BE
Base-Emitter On Voltage V
CE
=10V, I
C
=4mA 0.95 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=4mA, f=100MHz 650 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.7 pF
C
rb
Common-Base Feedback Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.65 pF
C
c·rbb´
Collector Base Time Constant V
CB
=10V, I
C
=4mA, f=31.8MHz 9 pF
KST10
VHF/UHF Transistor
3E
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3