Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST13/14
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Marking Code
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CES
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current 300 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CES
Collector-Emitter Breakdown Voltage I
C
=100µA, V
BE
=0 30 V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=10V, I
C
=0 100 nA
h
FE
DC Current Gain
: KST13
: KST14
: KST13
: KST14
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
5K
10K
10K
20K
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=100mA, I
B
=0.1mA 1.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=100mA 2.0 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA
f=100MHz
125 MHz
Type KST13 KST14
Mark 1M 1N
KST13/14
Darlington Amplifier Transistor
1M
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3