Datasheet

KST3904 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3904 Rev. A2 1
November 2011
KST3904
NPN Epitaxial Silicon Transistor
Features
• General Purpose Transistor
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
*
Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 200 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature Range -55 to 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10μA, I
E
=0 60 V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10μA, I
C
=0 6 V
I
CEX
Collector Cut-off Current V
CE
=30V, V
EB
=3V 50 nA
h
FE
* DC Current Gain V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
40
70
100
60
30
300
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.2
0.3
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.65 0.85
0.95
V
V
C
ob
Output Capacitance V
CB
=5V, I
E
=0, f=1MHz 4 pF
f
T
Current Gain-Bandwidth Product V
CE
=20V, I
C
=10mA, f=100MHz 300 MHz
NF Noise Figure I
C
=100μA, V
CE
=5V, R
S
=1KΩ,
f=10Hz to 15.7KHz
5dB
t
ON
Turn On Time V
CC
=3V, V
BE
=0.5V,
I
C
=10mA, I
B1
=1mA
70 ns
t
OFF
Turn Off Time V
CC
=3V, I
C
=10mA,
I
B1
=I
B2
=1mA
250 ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
1A
Marking