Datasheet

KST3906 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3906 Rev. A3 1
September 2010
KST3906
PNP Epitaxial Silicon Transistor
Features
• General Purpose Transistor
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
*
Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -200 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10μA, I
E
=0 -40 V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
= -1.0mA, I
B
=0 -40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10μA, I
C
=0 -5 V
I
CEX
Collector Cut-off Current V
CE
= -30V, V
EB
= -3V -50 nA
h
FE
* DC Current Gain V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
60
80
100
60
30
300
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
-0.25
-0.4
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
-0.65 -0.85
-0.95
V
V
f
T
Current Gain Bandwidth Product I
C
= -10mA, V
CE
= -20V, f=100MHz 250 MHz
C
ob
Output Capacitance V
CB
= -5V, I
E
=0, f=1.0MHz 4.5 pF
NF Noise Figure I
C
= -100μA, V
CE
= -5V
R
S
=1KΩ, f=10Hz to 15.7KHz
4dB
t
ON
Turn On Time V
CC
= -3V, V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
70 ns
t
OFF
Turn Off Time V
CC
= -3V, I
C
= -10mA
I
B1
=I
B2
= -1mA
300 ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
2A
Marking