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KST42 / KST43 — NPN Epitaxial Silicon Transistor

KST42 / KST43 Rev. 1.1.0

July 2014

KST42 / KST43

NPN Epitaxial Silicon Transistor

Features

• High-Voltage Transistor

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Thermal Characteristics

Values are at T

= 25°C unless otherwise noted.

Part Number Marking Package Packing Method

KST42MTF 1D SOT-23 3L Tape and Reel

KST43MTF 1E SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

CBO

Collector-Base Voltage

KST42 300

KST43 200

CEO

Collector-Emitter Voltage

KST42 300

KST43 200

EBO

Emitter-Base Voltage 6 V

Collector Current - Continuous 500 mA

J ,

STG

Junction and Storage Temperature Range -55 to +150 °C

Symbol Parameter Max. Unit

Collector Power Dissipation 350 mW

θJA

Thermal Resistance, Junction to Ambient 357 °C/W

1. Base 2. Emitter 3. Collector

SOT-23

Summary of content (5 pages)

PAGE 1
KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions VCBO Collector-Base Breakdown Voltage KST42 VCEO Collector-Emitter Breakdown Voltage(1) KST42 VEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 ICBO Collector Cut-Off Current VCB = 200 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 hFE KST43 KST43 DC Current Gain(1) (1) IC = 100 μA, IE = 0 IC = 1 mA, IB = 0 Min. Max.
PAGE 3
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 VCE = 10V 100 10 1 10 10 IC = 10 IB VBE(sat) 1 VCE(sat) 0.1 0.01 1 100 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Ccb [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 0.
PAGE 4
KST42 / KST43 — NPN Epitaxial Silicon Transistor Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.
PAGE 5
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