Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST4403
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -600 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -0.1mA, I
E
=0 -40 V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
= -1.0mA, I
B
=0 -40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -0.1mA, I
C
=0 -5 V
I
BEV
Base Cut-off Current V
CE
= -35V, V
BE
= -0.4V -0.1 µA
I
CEX
Collector Cut-off Current V
CE
= -35V, V
BE
= -0.4V -0.1 µA
h
FE
DC Current Gain V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1.0mA
V
CE
= -1V, I
C
= -10mA
*V
CE
= -2V, IC= -150mA
*V
CE
= -2V, I
C
= -500mA
30
60
100
100
20
300
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.4
-0.75
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.75 -0.95
-1.3
V
V
f
T
Current Gain Bandwidth Product I
C
= -20mA, V
CE
= -10V
f=100MHz
200 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0
f=140KHz
8.5 pF
t
ON
Turn On Time V
CC
= -30V, V
BE
= -2V
I
C
= -150mA, I
B1
= -15mA
35 ns
t
OFF
Turn Off Time V
CC
= -30V, I
C
= -150mA
I
B1
=I
B2
= -15mA
255 ns
KST4403
Switching Transistor
2T
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3