Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST5401
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -160 V
V
CEO
Collector-Emitter Voltage -150 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -500 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -160 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1.0mA, I
B
=0 -150 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
=0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -100V, I
E
=0 -50 nA
h
FE
DC Current Gain V
CE
= -5V, I
C
= -1.0mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -50mA
50
60
50
240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5mA
-0.2
-0.5
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5mA
-1.0
-1.0
V
V
f
T
Current Gain Bandwidth Product I
C
= -10mA, V
CE
= -10V
f=100MHz
100 300 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1.0MHz 6.0 pF
NF Noise Figure V
CE
= -5V, I
C
= -200µA
R
S
=10KΩ, f=10Hz to 15.7KHz
8.0 dB
KST5401
High Voltage Transistor
2L
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3