Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST5550
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 160 V
V
CEO
Collector-Emitter Voltage 140 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 600 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
=0 160 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 140 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current V
CB
=100V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 50 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=1.0mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
60
60
20
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.15
0.25
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
1.0
1.2
V
V
f
T
Current Gain Bandwidth Product I
C
=10mA, V
CE
=10V
f=100MHz
100 300 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1.0MHz 6.0 pF
1. Base 2. Emitter 3. Collector
KST5550
High Voltage Transistor
1F
Marking
SOT-23
1
2
3