Datasheet

©2003 Fairchild Semiconductor Corporation Rev. B2, February 2003
KST5551
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
• Refer to 2N5551 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 180 V
V
CEO
Collector-Emitter Voltage 160 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 600 mA
P
C
Collector Power Dissipation 350 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 180 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 160 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current V
CB
=120V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 50 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
80
80
30
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.15
0.2
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
1
1
V
V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=10mA,
f=100MHz
100 300 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 6 pF
NF Noise Figure V
CE
=5V, I
C
=250µA, R
S
=1KΩ,
f=10Hz to 15.7KMz
8dB
KST5551
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
=160V
• Collector Power Dissipation: P
C
(max)=350mW
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Mark: G1