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KST92 — PNP Epitaxial Silicon Transistor

KST92 Rev. 1.1.0

July 2014

KST92

PNP Epitaxial Silicon Transistor

Features

• High-Voltage Transistor

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Thermal Characteristics

Values are at T

= 25°C unless otherwise noted.

Part Number Marking Package Packing Method

KST92MTF 2D SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

CBO

Collector-Base Voltage -300 V

CEO

Collector-Emitter Voltage -300 V

EBO

Emitter-Base Voltage -5 V

Collector Current - Continuous -500 mA

J ,

STG

Junction and Storage Temperature Range -55 to +150 °C

Symbol Parameter Max. Unit

Collector Power Dissipation 350 mW

θJA

Thermal Resistance, Junction to Ambient 357 °C/W

1. Base 2. Emitter 3. Collector

SOT-23

Summary of content (5 pages)

PAGE 1
KST92 PNP Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST92MTF 2D SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Breakdown Voltage (1) Conditions Min. Max. Unit IC = -100 μA, IE = 0 -300 V IC = -1 mA, IB = 0 -300 V VCEO Collector-Emitter Breakdown Voltage VEBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 ICBO Collector Cut-Off Current VCB = -200 V, IE = 0 -0.25 μA IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -0.1 μA IC = -20 mA, IB = -2 mA -0.5 V IC = -20 mA, IB = -2 mA -0.
PAGE 3
KST92 — PNP Epitaxial Silicon Transistor VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE Typical Performance Characteristics 1000 hFE, DC CURRENT GAIN VCE = -10V 100 10 1 -1 -10 -100 -1000 -10000 IC = 10 IB VBE(sat) -1000 VCE(sat) -100 -10 -1 IC[mA], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 2. Saturation Voltage Figure 1. DC Current Gain 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Cib [pF], Cob [pF], CAPACITANCE -10 Cib 10 Cob 1 -0.
PAGE 4
KST92 — PNP Epitaxial Silicon Transistor Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.
PAGE 5
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