Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsOptoelectronics & DisplaysDIP-6

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

September 2009

MCT5201M, MCT5210M, MCT5211M

Low Input Current Phototransistor Optocouplers

Features

■

High CTR

CE(SAT)

comparable to Darlingtons

■

CTR guaranteed 0°C to 70°C

■

High common mode transient rejection 5kV/µs

■

Data rates up to 150kbits/s (NRZ)

■

Underwriters Laboratory (UL) recognized,

file #E90700, volume 2

■

IEC60747-5-2 approved (ordering option V)

Applications

■

CMOS to CMOS/LSTTL logic isolation

■

LSTTL to CMOS/LSTTL logic isolation

■

RS-232 line receiver

■

Telephone ring detector

■

AC line voltage sensing

■

Switching power supply

Description

The MCT52XXM series consists of a high-efficiency

AlGaAs, infrared emitting diode, coupled with an NPN

phototransistor in a six pin dual-in-line package.

The MCT52XXM is well suited for CMOS to LSTT/TTL

interfaces, offering 250% CTR

CE(SAT)

with 1mA of LED

input current. When an LED input current of 1.6mA is

supplied data rates to 20K bits/s are possible.

The MCT52XXM can easily interface LSTTL to LSTTL/

TTL, and with use of an external base to emitter resistor

data rates of 100K bits/s can be achieved.

Schematic Package Outlines

5 COL

4 EMITTER

BASE

ANODE

CATHODE

Summary of content (13 pages)

PAGE 1
MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers Features Description ■ High CTRCE(SAT) comparable to Darlingtons The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ.* Max. Units EMITTER VF Input Forward Voltage IF = 5mA All 1.25 ∆VF ∆TA Forward Voltage Temp. Coefficient IF = 2mA All -1.75 VR Reverse Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1.0MHz All 1.5 V mV/°C 6 V 18 pF DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.
PAGE 4
Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units DC CHARACTERISTICS CTRCE(SAT) Saturated Current Transfer Ratio(1) (Collector to Emitter) IF = 5mA, VCE = 0.4V MCT5201M 120 IF = 3.0mA, VCE = 0.4V MCT5210M 60 IF = 1.6mA, VCE = 0.4V MCT5211M 100 MCT5210M 70 MCT5211M 150 IF = 1.0mA, VCE = 0.4V CTR(CE) 75 Current Transfer Ratio IF = 3.0mA, VCE = 5.0V (Collector to Emitter)(1) I = 1.6mA, V = 5.0V F CE IF = 1.0mA, VCE = 5.
PAGE 5
2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.
PAGE 6
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 7
NORMALIZED CURRENT TRANSFER RATIO Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.6 1.4 TA = -40°C 1.2 1.0 0.8 0.1 NORMALIZED CURRENT TRANSFER RATIO TA = 25°C TA = 100°C 1 10 IF – LED FORWARD CURRENT (mA) 100 1.4 1.2 1.0 0.8 0.6 0.4 Normalized to: IF = 5mA VCE = 5V TA = 25°C 0.2 0.0 0.1 Fig. 4 Normalized Collector vs. Collector-Emitter Voltage 1.4 1.2 1.0 Normalized to: IF = 5mA VCE = 5V TA = 25°C IF = 10mA IF = 5mA 0.8 IF = 2mA 0.6 IF = 1mA 0.4 IF = 0.5mA 0.2 IF = 0.2mA 0.
PAGE 8
Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 8 Switching Time vs. Ambient Temperature 30 IF = 0mA VCE = 10V t – SWITCHING TIME (µs) ICEO – DARK CURRENT (nA) 10000 1000 100 10 1 RBE = 330kΩ 20 tf ts 10 5 0 10 20 30 40 50 60 70 80 90 TA – AMBIENT TEMPERATURE (°C) 0 -40 100 0 40 60 80 100 120 Fig. 10 Switching Time vs.
PAGE 9
VCC = 5.0 V VCC = 5.0 V Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. 1K VO 1K 4.7K D1 IF monitor VO IF monitor 330K 100 Ω D2 D3 330K 100 Ω D4 tr, tf, td, ts TEST CIRCUIT tPHL, tPLH TEST CIRCUIT Figure 13. INPUT 50% (IF) 0 td 90% OUTPUT (VO) 90% tPHL tPLH 1.3 V 10% 1.3 V 10% 0 ts tr tf Figure 14. Switching Circuit Waveforms ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.
PAGE 10
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 11
Option Order Entry Identifier (Example) No suffix MCT5201M S MCT5201SM SR2 MCT5201SR2M T MCT5201TM 0.4" Lead Spacing V MCT5201VM IEC60747-5-2 TV MCT5201TVM IEC60747-5-2, 0.
PAGE 12
.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.
PAGE 13
Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Dro