Datasheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev. 1.0.5 3
MCT6, MCT61, MCT62 — Dual Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All typicals at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 20mA 1.2 1.5 V
V
R
Reverse Voltage I
R
= 10µA 3.0 25 V
I
R
Reverse Current V
R
= 5V 0.001 10 µA
C
J
Junction Capacitance V
F
= 0V, f = 1MHz 50 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 30 85 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 6 13 V
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0 5 100 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz 8 pF
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
SWITCHING CHARACTERISTICS (AC)
t
on
Non-Saturated Turn-on Time R
L
= 100 Ω , I
C
= 2mA, V
CC
= 10V 2.4 µs
t
off
Non-Saturated Turn-off Time 2.4 µs
CURRENT TRANSFER RATIO, COLLECTOR-EMITTER (DC)
CTR MCT6 I
F
= 10mA, V
CE
= 10V 20 %
MCT61 I
F
= 5mA, V
CE
= 5V 50
MCT62 100
V
CE(sat)
Saturation Voltage I
F
= 16mA, I
C
= 2mA 0.15 0.40 V
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage I
I-O
≤ 10µA, t = 1min. 5000 Vac(rms)
R
ISO
Isolation Resistance V
I-O
= 500VDC 10
11
Ω
C
ISO
Isolation Capacitance f = 1MHz 0.5 pF