Datasheet

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT9001 Rev. 1.0.7 3
MCT9001 — Dual Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All typicals at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10mA 1.0 1.3 V
I
R
Reverse Current V
R
= 5V 10 µA
C
J
Junction Capacitance V
F
= 0 V, f = 1MHz 50 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 0.5mA, I
F
= 0 55 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 7 V
I
CEO
Collector-Emitter Dark Current V
CE
= 24V, I
F
= 0 5 100 nA
V
CE
= 24V, T
A
= 85°C 50 µA
C
CE
Capacitance V
CE
= 0V, f = 1MHz 8 pF
Symbol Parameter Test Conditions Min. Typ.* Max. Units
SWITCHING TIMES (AC)
Non-Saturated
t
on
Turn-on Time R
L
= 100 Ω , I
C
= 2mA, V
CC
= 10V 3 µs
t
off
Turn-off Time 3 µs
t
r
Rise Time 2.4 µs
t
f
Fall Time 2.4 µs
Saturated
t
on
Turn-on Time I
F
= 16mA, R
L
= 1.9k Ω , V
CE
= 5V 2.4 µs
t
off
Turn-off Time 25.0 µs
DC CHARACTERISTICS
CTR Current Transfer Ratio,
Collector-Emitter
I
F
= 5mA, V
CE
= 5V 50 600 %
CTR
(sat)
I
F
= 8mA, V
CE
= 0.4V 30 %
V
CE(sat)
Saturation Voltage I
F
= 8mA, I
C
= 2.4mA 0.40 V
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage I
I-O
≤ 10µA, t = 1min. 5000 Vac(rms)
R
ISO
Isolation Resistance V
I-O
= 500VDC 10
11
Ω
C
ISO
Isolation Capacitance f = 1MHz 0.5 pF