Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD117
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 100 V
V
CEO
Collector-Emitter Voltage - 100 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 2 A
I
CP
Collector Current (Pulse) - 4 A
I
B
Base Current - 50 mA
P
C
Collector Dissipation (T
C
=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage I
C
= - 30mA, I
B
= 0 - 100 V
I
CEO
Collector Cut-off Current V
CE
= - 50V, I
B
= 0 - 20 µA
I
CBO
Collector Cut-off Current V
CB
= - 100V, I
E
= 0 - 20 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 2 mA
h
FE
*DC Current Gain V
CE
= - 3V, V
EB
= - 0.5A
V
CE
= - 3V, V
EB
= - 2A
V
CE
= - 3V, I
C
= - 4A
500
1000
200
12K
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= -2A, I
B
= - 8mA
I
C
= - 4A, I
B
= - 40mA
- 2
- 3
V
V
V
BE
(sat) *Base-Emitter Saturation Voltage I
C
= - 4A, I
B
= - 40mA - 4 V
V
BE
(on) *Base-Emitter ON Voltage V
CE
= - 3A, I
C
= - 2A - 2.8 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= - 0.75A 25 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0
f= 0.1MHz
200 pF
MJD117
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117
R 110 k
Ω≅
R 20.6 k
Ω≅
Equivalent Circuit
B
E
C
R1
R2
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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