Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD350
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 300 V
V
CEO
Collector-Emitter Voltage - 300 V
V
EBO
Emitter-Base Voltage - 3 V
I
C
Collector Current (DC) - 0.5 A
I
CP
Collector Current (Pulse) - 0.75 A
P
C
Collector Dissipation (T
C
= 25°C) 15 W
Collector Dissipation (T
a
= 25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= 1mA, I
B
= 0 -300 V
I
CEO
Collector Cut-off Current V
CB
= -300V, I
E
=0 -0.1 mA
I
EBO
Emitter Cut-off Current V
EB
= -3V, I
C
= 0 -0.1 mA
h
FE
* DC Current Gain V
CE
= -10V, I
C
= -50mA 30 240
MJD350
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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