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MJD47 / MJD50 — NPN Epitaxial Silicon Transistor

MJD47 / MJD50 Rev. 1.1.0 1

March 2014

MJD47 / MJD50

NPN Epitaxial Silicon Transistor

Features

• High-Voltage and High-Reliability

• D-PAK for Surface-Mount Applications

• Lead-Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “ - I ” Suffix)

• Electrically Similar to Popular TIP47 and TIP50

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

MJD47TF MJD47 TO-252 3L (DPAK) Tape and Reel

MJD50TF MJD50 TO-252 3L (DPAK) Tape and Reel

Symbol Parameter Value Unit

CBO

Collector-Base Voltage

MJD47 350

MJD50 500

CEO

Collector-Emitter Voltage

MJD47 250

MJD50 400

EBO

Emitter-Base Voltage 5 V

Collector Current (DC) 1 A

Collector Current (Pulse) 2 A

Base Current 0.6 A

Junction Temperature 150 °C

STG

Storage Temperature Range - 65 to 150 °C

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (5 pages)

PAGE 1
MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features • • • • • High-Voltage and High-Reliability D-PAK for Surface-Mount Applications Lead-Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “ - I ” Suffix) Electrically Similar to Popular TIP47 and TIP50 D-PAK 1 1.Base I-PAK 1 2.Collector 3.
PAGE 2
Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TC = 25°C) 15.0 Collector Dissipation (TA = 25°C) 1.56 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage(1) ICEO Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE Conditions MJD47 IC = 30 mA, IB = 0 MJD50 Min. Typ. Max.
PAGE 3
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 IC = 5 I B VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 10 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC = 200V IC = 5IB tSTG, tF [μs], TURN OFF TIME tR, tD [μs], TURN ON TIME VCC = 200V IC = 5IB 1 tR 0.1 tSTG 1 0.1 tF tD 0.01 0.01 0.1 1 0.01 0.01 10 0.
PAGE 4
MJD47 / MJD50 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-252 3L ) $ 0,1 ) 0,1 ) & 0,1 0$; 0,1 /$1' 3$77(51 5(&200(1'$7,21 ) % ) ) 0,1 6(( '(7$,/ $ ) % ) *$*( 3/$1( ) 127(6 81/(66 27+(5:,6( 63(&,),(' $ 127 &203/,$17 72 -('(& 72
PAGE 5
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