Datasheet
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJE170/171/172
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: MJE170
: MJE171
: MJE172
- 60
- 80
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : MJE170
: MJE171
: MJE172
- 40
- 60
- 80
V
V
V
V
EBO
Emitter-Base Voltage - 7 V
I
C
Collector Current (DC) - 3 A
I
CP
Collector Current (Pulse) - 6 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 12.5 W
Collector Dissipation (T
a
=25°C) 1.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breaksown Voltage
: MJE170
: MJE171
: MJE172
I
C
= 10mA, I
B
= 0
-40
-60
-80
V
V
V
I
CBO
Collector Cut-off Current : MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, @T
C
= 150°C
V
CB
= - 80V, I
E
= 0, @T
C
= 150°C
V
CB
= - 100V, I
E
= 0, @T
C
= 150°C
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
µA
µA
µA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= - 7V, I
C
= 0 -0.1 µA
h
FE
DC Current Gain V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
50
30
12
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
-0.3
-0.9
-1.7
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
-1.5
-2.0
V
V
V
BE
(on) Base-Emitter ON Voltage V
CE
= - 1V, I
C
= - 500mA -1.2 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= - 100mA 50 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0, f = 0.1MHz 50 pF
MJE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
TO-126
1. Emitter 2.Collector 3.Base