Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE180/181/182
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : MJE180
: MJE181
: MJE182
60
80
100
V
V
V
V
CEO
Collector-Emitter Voltage : MJE180
: MJE181
: MJE182
40
60
80
V
V
V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current (DC) 3 A
I
CP
Collector Current (Pulse) 6 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
a
=25°C) 1.5 W
P
C
Collector Dissipation (T
C
=25°C) 12.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
I
C
= 10mA, I
B
= 0 40
60
80
V
V
V
I
CBO
Collector Cut-off Current : MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
V
CB
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CB
= 60V, I
E
= 0 @ T
C
= 150°C
V
CB
= 80V, I
E
= 0 @ T
C
= 150°C
V
CB
= 100V, I
E
= 0 @ T
C
= 150°C
0.1
0.1
0.1
0.1
0.1
0.1
µA
µA
µA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= 7V, I
C
= 0 0.1 µA
h
FE
DC Current Gain V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 1.5A
50
30
12
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
0.3
0.9
1.7
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
1.5
2.0
V
V
V
BE
(on) Base-Emitter ON Voltage V
CE
= 1V, I
C
= 500mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 100mA 50 MHz
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f = 0.1MHz 30 pF
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
1
TO-126
1. Emitter 2.Collector 3.Base