Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJE200
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter- Base Voltage 8 V
I
C
Collector Current 5 A
P
C
Collector Dissipation (T
C
=25°C) 15 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=10mA, I
B
=0 25 V
I
CBO
Collector Cut-off Current V
CB
=40V, I
E
=0
V
CB
=40V, I
E
=0 @ T
J
=125°C
100
100
nA
µA
I
EBO
Emitter Cut-off Current V
BE
=8V, I
C
=0 100 nA
h
FE
DC Current Gain V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
70
45
10
180
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA
I
C
=2A, I
C
=200mA
I
C
=5A, I
B
=1A
0.3
0.75
1.8
V
V
V
V
BE
(sat) Base- Emitter Saturation Voltage I
C
=5A, I
B
=1A 2.5 V
V
BE
(on) Base-Emitter ON Voltage V
CE
=1V, I
C
=2A 1.6 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=100mA 65 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=0.1MHz 80 pF
MJE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
T
=65MHz @ I
C
=100mA (Min.)
• Complement to MJE210
1
TO-126
1. Emitter 2.Collector 3.Base