Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE210
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 40 V
V
CEO
Collector-Emitter Voltage - 25 V
V
EBO
Emitter-Base Voltage - 8 V
I
C
Collector Current - 5 A
P
C
Collector Dissipation (T
C
=25°C) 15 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= - 10mA, I
B
= 0 -25 V
I
CBO
Collector Cut-off Current V
CB
= -40V, I
E
= 0
V
CB
= - 40V, I
E
=0 @ T
J
= 125°C
-100
-100
nA
µA
I
EBO
Emitter Cut-off Current V
BE
= - 8V, I
C
= 0 -100 nA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
70
45
10
180
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 500mA, I
B
= - 50mA
I
C
= - 2A, I
C
= - 200mA
I
C
= - 5A, I
B
= - 1A
-0.3
-0.75
-1.8
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 1A -2.5 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= - 1V, I
C
= - 2A -1.6 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= - 100mA 65 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0, f = 1MHz 120 pF
MJE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
T
=65MHz@I
C
= -100mA (Min.)
• Complement to MJE200
1
TO-126
1. Emitter 2.Collector 3.Base