Datasheet

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E2 2
Electrical Characteristics T
A
=25°C unless otherwise noted
Note:
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
Ordering Information
Symbol Parameter Conditions Type Min. Typ. Max. Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 100μAAll60 V
I
DSS
Zero Gate Voltage Drain Current V
DS
= 25V, V
GS
= 0V All 0.5 μA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 15V, V
DS
= 0V All 10 nA
ON CHARACTERISTICS (Notes 1)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1mA All 0.8 2.1 3 V
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10V, I
D
= 200mA All 1.2 5 Ω
g
FS
Forward Transconductance V
DS
= 10V, I
D
= 200mA BS170 320 mS
V
DS
≥ 2 V
DS(on)
,
I
D
= 200mA
MMBF170 320
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
All 24 40 pF
C
oss
Output Capacitance All 17 30 pF
C
rss
Reverse Transfer Capacitance All 7 10 pF
Switching Characteristics (Notes 1)
t
on
Turn-On Time V
DD
= 25V, I
D
= 200mA,
V
GS
= 10V, R
GEN
= 25Ω
BS170 10 ns
V
DD
= 25V, I
D
= 500mA,
V
GS
= 10V, R
GEN
= 50Ω
MMBF170 10
t
off
Turn-Off Time V
DD
= 25V, I
D
= 200mA,
V
GS
= 10V, R
GEN
= 25Ω
BS170 10 ns
V
DD
= 25V, I
D
= 500mA,
V
GS
= 10V, R
GEN
= 50Ω
MMBF170 10
Part Number Package Package Type Lead Frame Pin array
BS170 TO-92 BULK STRAIGHT D G S
BS170_D26Z TO-92 Tape and Reel FORMING D G S
BS170_D27Z TO-92 Tape and Reel FORMING D G S
BS170_D74Z TO-92 AMMO FORMING D G S
BS170_D75Z TO-92 AMMO FORMING D G S
MMBF170 SOT-23 Tape and Reel