Datasheet

PN4091

PN4092

PN4093

MMBF4091

MMBF4092

MMBF4093

N-Channel Switch

This device is designed for low level analog switching, sample

and hold circuits and chopper stabalized amplifiers. Sourced

from Process 51. See J111 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

Drain-Gate Voltage 40 V

Gate-Source Voltage - 40 V

Forward Gate Current 50 mA

stg

Operating and Storage Junction Temperature Range -55 to +150

Symbol Characteristic Max Units

PN4091-4093 *MMBF4091-4093

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

TO-92

SOT-23

Mark: 61J / 61K / 61L

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

NOTE: Source & Drain

are interchangeable

PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093

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PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
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(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units - 10 - 7.0 - 5.0 - 200 - 400 200 200 200 V V V pA nA pA pA pA 400 nA 400 nA 400 nA 0.2 0.2 0.2 30 50 80 mA mA mA V V V Ω Ω Ω VDS = VGS = 0, f= 1.0 kHz 30 50 80 16 Ω Ω Ω pF 5.0 pF 25 35 60 ns ns ns 40 60 80 ns ns ns OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 VGS(off) Gate-Source Cutoff Voltage VDS = 20 V, ID = 1.
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