Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsMMBF4117, MOSFET

PN4117

PN4118

PN4119

MMBF4117

MMBF4118

MMBF4119

N-Channel Switch

This device is designed for low current DC and audio applications.

These devices provide excellent performance as input stages for

sub-picoamp instrumentation or any high impedance signal

sources. Sourced from Process 53.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

Drain-Gate Voltage 40 V

Gate-Source Voltage - 40 V

Forward Gate Current 50 mA

stg

Operating and Storage Junction Temperature Range -55 to +150

TO-92

SOT-23

Mark: 61A / 61C / 61E

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

NOTE: Source & Drain

are interchangeable

PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119

Symbol Characteristic Max Units

PN4117-4119 *MMBF4117-4119

Total Device Dissipation

Derate above 25

350

2.8

225

1.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

Summary of content (5 pages)

PAGE 1
PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 G S G S TO-92 SOT-23 D D Mark: 61A / 61C / 61E NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units IG = - 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 150°C 4117 VDS = - 10 V, ID = 1.0 nA 4118 4119 - 40 - 0.6 - 1.0 - 2.0 - 10 - 25 - 1.8 - 3.0 - 6.0 pA nA V V V 4117 4118 4119 30 80 200 90 240 600 µA µA µA 70 80 100 210 250 330 µmhos µmhos µmhos 3.0 5.0 10 µmhos µmhos µmhos 3.0 µmhos µmhos µmhos pF 1.
PAGE 3
(continued) Typical Characteristics Parameter Interactions Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch
PAGE 4
(continued) Typical Characteristics (continued) Leakage Current vs. Voltage Output Conductance vs. Drain Current Common Drain-Source Capacitance vs. Voltage PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch 5 Transconductance vs. Drain Current Noise Voltage vs.
PAGE 5
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