Datasheet

MMBF4416 — N-Channel RF Amplifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4416 Rev. B2 1
April 2009
MMBF4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Electrical Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Junction and Storage Temperature Range -55 to +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= 1μA-30V
I
GSS
Gate Reverse Current V
GS
= -20V, V
DS
= 0
V
GS
= -20V, V
DS
= 0, T
A
= 150°C
-1
-200
nA
nA
V
GS
(off) Gate Source Cut-off Voltage V
DS
= 15V, I
D
= 1nA -2.5 -6 V
V
GS
Gate Source Voltage V
DS
= 15V, I
D
= 0.5mA -1 -5.5 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current V
GS
= 15V, V
GS
= 0 5 15 mA
V
GS
(f) Gate-Source Forward Voltage V
DS
= 0, I
G
= 1mA 1 V
Small Signal Characteristics
lY
fs
l Forward Transfer Admittance V
DS
= 15V, V
GS
= 0, f = 1KHz 4500 7500 μmhos
ly
os
l Output Admittance V
DS
= 15V, V
GS
= 0, f = 1KHz 50 μmhos
C
iss
Input Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 4 PF
C
rss
Reverse Transfer Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 0.9 PF
C
oss
Output Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 2 PF
Functional Characteristics
NF Noise Figure V
DS
= 15V, I
D
= 5mA, R
g
= 100Ω, f = 100MHz 2 dB
G
ps
Common Source Power Gain V
DS
= 15V, I
D
= 5mA, R
g
= 100Ω, f = 100MHz 18 dB
SOT-23
D
S
G
Mark: 6A