Datasheet

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBF4416A Rev. A2
MMBF4416A N-Channel RF Amplifier
March 2005
MMBF4416A
N-Channel RF Amplifier
• This device is designed for RF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 35 V
V
GS
Gate-Source Voltage -35 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= 1.0µA-35 V
I
GSS
Gate Reverse Current V
GS
= -20V, V
DS
= 0 -100 pA
V
GS
(off) Gate Source Cut-off Voltage V
DS
= 15V, I
D
= 1.0nA -2.5 -6.0 V
V
GS
Gate Source Voltage V
DS
= 15V, I
D
= 500µA-1 -5.5V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current V
GS
= 15V, V
GS
= 0 5 15 mA
V
GS
(f) Gate-Source Forward Voltage V
DS
= 0, I
G
= 1.0mA 1 V
Small Signal Characteristics
g
fs
Forward Transfer Conductance * V
DS
= 15V, V
GS
= 0, f = 1.0kHz 4500 7500 µmhos
g
os
Output Conductance * V
DS
= 15V, V
GS
= 0, f = 1.0kHz 50 µmhos
C
iss
Input Capacitance V
DS
= 15V, V
GS
= 0, f = 1.0MHz 4.0 pF
Crss Reverse Transfer Capacitance V
DS
= 15V, V
GS
= 0, f = 1.0MHz 0.8 pF
C
oss
Output Capacitance V
DS
= 15V, V
GS
= 0, f = 1.0MHz 2.0 pF
NF Noise Figure V
DS
= 15V, V
GS
= 0, I
D
= 5mA,
R
g
= 1kΩ, f = 400MHz
4.0 dB
SOT-23
D
S
G
Mark: 6BG