Datasheet

©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
MMBF5103
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 40 V
V
GS
Gate-Source Voltage -40 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 1.0µA, V
DS
= 0 -40 V
I
GSS
Gate Reverse Current V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
a
= 125°C
-200
-500
pA
nA
V
GS(off)
Gate-Source Cutoff Voltage V
DS
= 20V, I
D
= 1.0nA -1.2 -2.7 V
V
GS(f)
Gate-Source Forward Voltage I
G
= 1.0mA, V
DS
= 0 1.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, V
GS
= 0 10 40 mA
Small Signal Characteristics
C
ISS
Input Capacitance V
DS
= 15V, V
GS
= 0, f = 1.0MHz 16 pF
C
rss
Reverse Transfer Capacitance V
GS
= -15V, f = 1.0MHz 6.0 pF
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 556 °C/W
MMBF5103
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper st
abilized amplifiers.
• Sourced from Process 51.
• See J111 for characteristics.
1. Drain 2. Source 3. Gate
D
S
G
SOT-23
Mark: 66A