Datasheet

©2003 Fairchild Semiconductor Corporation Rev. A, February 2003
MMBF5434
Absolute Maximum Ratings * T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= -1.0µA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current V
GS
= -15V, V
DS
= 0 200 nA
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= 5.0V, I
D
= 3.0nA -1.0 -4.0 V
I
D
( o f f ) D r a i n C u t o f f V o l t a g V
DS
= 5.0, V
GS
= -10V 200 pA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, I
GS
= 0 30 mA
r
DS
(on) Drain-Source On Resistance V
DS
= 0, I
D
= 10mA 10 Ω
Small Signal Characteristics
C
iss
Input Capacitance V
DS
= 0, V
GS
= 10V, f = 1.0MHz 30 pF
C
rss
Reverse Transfer Capacitance V
DS
= 0, V
GS
= 10V, f = 1.0MHz 15 pF
MMBF5434
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
1. Drain 2. Source 3. Gate
1
2
3
SuperSOT-3
Marking: 61Z