Datasheet

2N5457

2N5458

2N5459

MMBF5457

MMBF5458

MMBF5459

N-Channel General Purpose Amplifier

This device is a low level audio amplifier and switching transistors,

and can be used for analog switching applications. Sourced from

Process 55.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

Drain-Gate Voltage 25 V

Gate-Source Voltage - 25 V

Forward Gate Current 10 mA

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TO-92

SOT-23

Mark: 6D / 61S / 6L

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

NOTE: Source & Drain

are interchangeable

2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459

Symbol Characteristic Max Units

2N5457-5459 *MMBF5457-5459

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

PAGE 1
G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min IG = 10 µA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C 5457 VDS = 15 V, ID = 10 nA 5458 5459 VDS = 15 V, ID = 100 µA 5457 VDS = 15 V, ID = 200 µA 5458 VDS = 15 V, ID = 400 µA 5459 - 25 Typ Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage VGS Gate-Source Voltage V - 1.0 - 200 - 6.
PAGE 3
(continued) Typical Characteristics (continued) Transfer Characteristics Common Drain-Source Output Conductance vs. Drain Current Transfer Characteristics Parameter Interaction Transconductance vs.
PAGE 4
(continued) Typical Characteristics (continued) Channel Resistance vs. Temperature Noise Voltage vs. Frequency Leakage Current vs. Voltage Capacitance vs.
PAGE 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.