Datasheet

2N5460

2N5461

2N5462

MMBF5460

MMBF5461

MMBF5462

P-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources. Sourced

from Process 89.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

Drain-Gate Voltage - 40 V

Gate-Source Voltage 40 V

Forward Gate Current 10 mA

Operating and Storage Junction Temperature Range -55 to +150

Symbol Characteristic Max Units

2N5460-5462 *MMBF5460-5462

Total Device Dissipation

Derate above 25°C

350

2.8

225

1.8

mW/°C

θJC

Thermal Resistance, Junction to Case 125

°C/W

θJA

Thermal Resistance, Junction to Ambient 357 556

°C/W

TO-92

SOT-23

Mark: 6E / 61U / 61V

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

NOTE: Source & Drain

are interchangeable

2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

2N5460/5461/5462/MMBF5460/5461/5462, Rev A

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G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min IG = 10 µA, VDS = 0 VGS = 20 V, VDS = 0 VGS = 20 V, VDS = 0, T A = 100°C 5460 VDS = 15 V, ID = 1.0 µA 5461 5462 5460 VDS = 15 V, ID = 0.1 mA 5461 VDS = 15 V, ID = 0.2 mA 5462 VDS = 15 V, ID = 0.4 mA 40 Typ Max Units OFF CHARACTERISTICS V (BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current V GS(off) Gate-Source Cutoff Voltage V GS Gate-Source Voltage V 0.75 1.0 1.8 0.
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(continued) Typical Characteristics (continued) Transfer Characteristics Common Drain-Source Leakage Current vs. Voltage Transfer Charactersitics Parameter Interactions Channel Resistance vs.
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(continued) Typical Characteristics (continued) Transconductance vs. Drain Current Output Conductance vs. Drain Current Noise Voltage vs. Frequency Capacitance vs. Voltage 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier 5 P D - POWER DISSIPATION (mW) Power Dissipation vs.
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