Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Absolute Maximum Ratings * T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= -10µA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100°C
-3.0
-200
nA
nA
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= 15V, I
D
= 10nA 108
109
110
-3.0
-2.0
-0.5
-10
-6.0
-4.0
V
V
V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, I
GS
= 0 108
109
110
80
40
10
mA
mA
mA
r
DS
(on) Drain-Source On Resistance V
DS
≤ 0.1V, V
GS
= 0 108
109
110
8.0
12
18
Ω
Ω
Ω
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
Drain Gate & Source Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0MHz 85 pF
C
dg
(on) Drain-Gate Off Capacitance V
DS
= 0, V
GS
= -10, f = 1.0MHz 15 pF
C
sg
(off) Source-Gate Off Capacitance V
DS
= 0, V
GS
= -10, f = 1.0MHz 15 pF
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
1. Drain 2. Source 3. Gate
1
2
3
TO-92
1
1. Drain 2. Source 3. Gate
SuperSOT-3
Marking: I8