Datasheet

MMBFJ110 — N-Channel Switch
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ110 Rev. A0 1
April 2011
MMBFJ110
N-Channel Switch
Features
• This device is designed for digital switching applications
where very low on resistance is mandatory.
• Sourced from process 58.
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T
A
=25°C unless otherwise noted
* Device mounted on a minimum pad.
Electrical Characteristics T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derate above 25°C
460
3.68
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 270 °C/W
Symbol Parameter Conditions Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -10μA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100°C
-3.0
-200
nA
nA
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= 15V, I
D
= 10nA -0.5 -4.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current* V
DS
= 15V, I
GS
= 0 10 mA
r
DS
(on) Drain-Source On Resistance V
DS
≤ 0.1V, V
GS
= 0 18 Ω
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
Drain-Gate &Source-Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0MHz 85 pF
C
dg
(off) Drain-Gate Off Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 15 pF
C
sg
(off) Source-Gate Off Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 15 pF
1. Drain 2. Source 3. Gate
Marking : 110
SuperSOT-3
1
2
3