Datasheet

MMBFJ270 — P-Channel Switch
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ270 Rev. B 1
August 2008
MMBFJ270
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings (Note1) T
a
= 25°C unless otherwise noted
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics (Note3)
On Characteristics (Note3)
Note3 : Short duration test pulse used to minimize self-heating effect.
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage -30 V
V
GS
Gate-Source Voltage 30 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient (Note2) 556 °C/W
Symbol Parameter Test Condition MIN MAX Units
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= 1.0µA, V
DS
= 0 30 V
I
GSS
Gate Reverse Current V
GS
= 20V, V
DS
= 0 200 pA
V
GS(off)
Gate-Source Cutoff Voltage V
DS
= -15V, I
D
= -1.0nA 0.5 2.0 V
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= -15V, V
GS
= 0 -2.0 -15 mA
gfs Forward Transferconductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 6000 15000 µmhos
goss Common- Source Output Conduc-
tance
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 200 µmhos
Mark : 61S
D
S
G
SOT-23