Datasheet

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBFJ271 Rev. A
MMBFJ271 P-Channel Switch
tm
June 2006
MMBFJ271
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics (Note3)
On Characteristics (Note3)
Note3 : Short duration test pulse used to minimize self-heating effect.
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage -30 V
V
GS
Gate-Source Voltage 30 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 556 °C/W
Symbol Parameter Test Condition MIN MAX Units
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= 1.0µA, V
DS
= 0 30 V
I
GSS
Gate Reverse Current V
GS
= 20V, V
DS
= 0 200 pA
V
GS(off)
Gate-Source Cutoff Voltage V
DS
= -15V, I
D
= -1.0nA 1.5 4.5 V
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= -15V, V
GS
= 0 -6.0 -50 mA
gfs Forward Transferconductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 8000 18000 µmhos
goss Common- Source Output Conduc-
tance
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 500 µmhos
Mark : 62T
D
S
G
SOT-23