Datasheet

MMBFJ305 — N-Channel RF Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ305 Rev. A0 1
July 2011
MMBFJ305
N-Channel RF Amplifier
Features
• This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
• Sourced from process 50.
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T
A
= 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06”.
Electrical Characteristics T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 556 °C/W
Symbol Parameter Conditions Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1.0μA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current V
GS
= -20V, V
DS
= 0 -100 pA
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= 15V, I
D
= 1.0nA -0.5 -3.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current* V
DS
= 15V, V
GS
= 0 1.0 8.0 mA
Small Signal Characteristics
gfs Forward Transfer Conductance V
DS
= 15V, V
GS
= 0, f = 1.0kHz 3000 μmhos
g
OSS
Output Conductance V
DS
= 15V, V
GS
= 0, f = 1.0kHz 50 μmhos
Note : Drain & Source are interchangeable.
Marking : 6Q
SOT-23
D
S
G