Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsMMBFJ309, MOSFET

J309

J310

N-Channel RF Amplifier

This device is designed for VHF/UHF amplifier, oscillator and mixer

applications. As a common gate amplifier, 16 dB at 100 MHz and

12 dB at 450 MHz can be realized. Sourced from Process 92.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

MMBFJ309

MMBFJ310

Symbol Parameter Value Units

Drain-Source Voltage 25 V

Gate-Source Voltage - 25 V

Forward Gate Current 10 mA

stg

Operating and Storage Junction Temperature Range -55 to +150

SOT-23

Mark: 6U / 6T

TO-92

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

NOTE: Source & Drain

are interchangeable

J309 / J310 / MMBFJ309 / MMBFJ310

Symbol Characteristic Max Units

J309-J310 *MMBFJ309-310

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

Summary of content (6 pages)

PAGE 1
J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min IG = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA - 25 Typ Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage V - 1.0 - 1.0 nA µA 309 310 - 1.0 - 2.0 - 4.0 - 6.5 V V 309 310 12 24 30 60 1.
PAGE 3
(continued) Typical Characteristics Transfer Characteristics Transfer Characteristics Input Admittance Transfer Characteristics Transfer Characteristics Forward Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
PAGE 4
(continued) Typical Characteristics (continued) Common Drain-Source Output Conductance vs. Drain Current Output Admittance Capacitance vs. Voltage J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier 5 Noise Voltage vs.
PAGE 5
(continued) Typical Characteristics (continued) Transconductance vs. Drain Current Parameter Interactions Leakage Current vs.
PAGE 6
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