Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsMMBFJ310, MOSFET

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1

December 2010

J309 / J310 / MMBFJ309 / MMBFJ310

N-Channel RF Amplifier

Features

• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.

• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

• Sourced from Process 92.

• Source & Drain are interchangeable.

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T

= 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Symbol Parameter Value Units

Drain-Source Voltage 25 V

Gate-Source Voltage -25 V

Forward Gate Current 10 mA

stg

Operating and Storage Junction Temperature Range - 55 to +150 °C

Symbol Parameter

Max.

Units

J309-J310 *MMBFJ309-310

Total Device Dissipation

Derate above 25°C

625

5.0

350

2.8

mW/°C

θJC

Thermal Resistance, Junction to Case 127 °C/W

θJA

Thermal Resistance, Junction to Ambient 357 556 °C/W

J309

MMBFJ309

SOT-23

Mark MMBFJ309 : 6U

J310

MMBFJ310

MMBFJ310 : 6T

TO-92

Summary of content (6 pages)

PAGE 1
J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.
PAGE 2
Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units -1.0 -1.0 nA μA Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 IGSS VGS(off) -25 V Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309 310 -1.0 -2.0 -4.0 -6.5 V V Zero-Gate Voltage Drain Current* VDS = 10V, VGS = 0 309 310 12 24 30 60 mA mA Gate-Source Forward Voltage VDS = 0, IG = 1.
PAGE 3
Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Forward Transadmittance Input Admittance © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.
PAGE 4
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics (continued) Common Drain-Source Output Conductance vs. Drain Current Output Admittance Capacitance vs. Voltage Noise Voltage vs. Frequency Reverse Transadmittance © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.
PAGE 5
Transconductance vs. Drain Current Parameter Interactions Leakage Current vs. Voltage P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 700 600 TO-92 500 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 125 150 www.fairchildsemi.
PAGE 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.