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PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier

PN2222A / MMBT2222A / PZT2222A Rev. A3 1

August 2010

PN2222A / MMBT2222A / PZT2222A

NPN General Purpose Amplifier

Features

• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

• Sourced from process 19.

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T

= 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 40 V

CBO

Collector-Base Voltage 75 V

EBO

Emitter-Base Voltage 6.0 V

Collector Current 1.0 A

STG

Operating and Storage Junction Temperature Range - 55 ~ 150 °C

Symbol Parameter

Max.

Units

PN2222A *MMBT2222A **PZT2222A

Total Device Dissipation

Derate above 25°C

625

5.0

350

2.8

1,000

8.0

mW/°C

θJC

Thermal Resistance, Junction to Case 83.3 °C/W

θJA

Thermal Resistance, Junction to Ambient 200 357 125 °C/W

PN2222A

MMBT2222A PZT2222A

EBC

TO-92 SOT-23 SOT-223

Mark:1P

Summary of content (5 pages)

PAGE 1
PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223 B Mark:1P EBC C B Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.
PAGE 2
Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 IC = 10μA, IE = 0 BV(BR)CBO Collector-Base Breakdown Voltage 40 V 75 V BV(BR)EBO Emitter-Base Breakdown Voltage 6.0 V IE = 10μA, IC = 0 ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.
PAGE 3
V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 25 °C 캜 0.1 β = 10 - 40 °C 캜 25°C 캜 125 °C 캜 0.6 0.4 1 10 100 I ICC - COLLECTOR CURRENT (m A) 1 500 1 VCE = 5V 0.8 25 °C 0.6 125 °C 0.4 0.2 0.
PAGE 4
(Continued) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = 400 Ic V cc = 25 V TIME (nS) TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off tf 80 80 t on 0 10 td 100 I CIC - COLLECTOR CURRENT (mA) 0 10 1000 Figure 7. Turn On and Turn Off Times vs Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.
PAGE 5
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