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PN2369A MMBT2369A

NPN Switching Transistor

This device is designed for high speed saturated switching at collector

currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 15 V

CBO

Collector-Base Voltage 40 V

EBO

Emitter-Base Voltage 4.5 V

Collector Current - Continuous 200 mA

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN2369A MMBT2369A*

Total Device Dissipation

Derate above 25

350

2.8

225

1.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

TO-92

SOT-23

Mark: 1S

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 1997 Fairchild Semiconductor Corporation

PN2369A / MMBT2369A

Summary of content (14 pages)

PAGE 1
PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.
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(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µA, VBE = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 4.
PAGE 3
(continued) VC E = 1.0V 150 125 ° C 100 25 ° C 50 - 40 °C h FE - DC CURRENT GAIN 200 0.01 100 Base-Emitter Saturation Voltage vs Collector Current 1.4 β = 10 1.2 1 0.8 0.6 0.4 - 40 °C 25 °C 125 °C 0.1 IC 1 10 100 - COLLE CTOR CURRENT ( mA) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 0.2 0.1 125 °C - 40 °C 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1 - 40°C 0.8 25 °C 125 °C 0.6 0.4 0.2 0.1 V CE= 1.
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(continued) Typical Characteristics (continued) Output Capacitance vs Reverse Bias Voltage Switching Times vs Collector Current 5 100 SWITCHING TIMES (ns) C ibo 3 C obo 2 1 0.5 1 5 10 REVERSE BIAS VOLTAGE (V) 12 S WITCHING TIMES ( ns) tsf 10 tss 8 6 tsd 4 tsr I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V 0 25 I B2 - TURN OFF BASE CURRENT (mA) T A 50 75 - AMBIENT TE MPERATURE (°C) 100 Storage Time vs Turn On and Turn Off Base Currents -12 I C = 10 mA VCC = 3.
PAGE 5
(continued) -6 I C = 10 mA VCC = 3.0 V -5 8.0 ns -4 t f = 7.0 ns -3 -2 10 ns -1 0 0 2 I B2 - TURN OFF BASE CURRENT (mA) 10 Fall Time vs Turn On and Turn Off Base Currents -30 I C = 100 mA 3.0 ns VCC = 3.0 V -25 -20 4.0 ns t f = 2.0 ns 8.0 ns -15 12.0 ns -10 -5 0 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 Fall Time vs Turn On and Turn Off Base Currents -12 I C= 30 mA VCC = 3.0 V -10 -8 50 t r= 2.0 ns 5.0 ns 1 10 ns 0 1 20 ns 10 100 I C - COLLE CTOR CURRENT (mA) 4.
PAGE 6
(continued) Test Circuits 890 Ω 'A' VIN 0 0.1 µF +6V 1 KΩ Ω 500 Ω VIN 500 Ω 56 Ω 10% 0.0023µ µF + 10 µF 10 µF VOUT ts 0.0023µ µF 11 V 10% Pulse waveform at point ' A' 0 - 4V VOUT 91 Ω - 10 Pulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 0.1 µF + 10 V FIGURE 1: Charge Storage Time Measurement Circuit VOUT 220 Ω VIN VIN 0 10% VIN Ω 3.3 KΩ 10% 0 VOUT 90% t on ton VBB = - 3.0 V VIN = + 15.
PAGE 7
TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.
PAGE 8
TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG.
PAGE 9
TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.
PAGE 10
TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev.
PAGE 11
SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel.
PAGE 12
SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D1 D0 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.
PAGE 13
SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 ©2000 Fairchild Semiconductor International September 1998, Rev.
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