Datasheet

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 1
October 2011
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
a
= 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J,
T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter
Max.
Units
2N3904 *MMBT3904 **PZT3904
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 125 °C/W
2N3904
MMBT3904
PZT3904
EBC
TO-92 SOT-23 SOT-223
Mark:1A
C
B
E
E
B
C
C