Datasheet

MMBT3906T — PNP Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906T Rev. 1.0.0 1
February 2008
MMBT3906T
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904T is recommended
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
a
=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* T
a
=25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current 200 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
P
C
Collector Power Dissipation, by R
θJA
250 mW
R
θJA
Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10μA, I
E
= 0 -40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10μA, I
C
= 0 -5 V
I
CEX
Collector Cut-off Current V
CE
= -30V, V
EB(OFF)
=-0.3V -50 nA
h
FE
DC Current Gain V
CE
= 1V, I
C
=- 0.1mA
V
CE
= 1V, I
C
= -1mA
V
CE
= 1V, I
C
= -10mA
V
CE
= 1V, I
C
= -50mA
V
CE
= 1V, I
C
= -100mA
60
80
100
60
30
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-0.25
-0.4
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-0.65 -0.85
-0.95
V
V
f
T
Current Gain Bandwidth Product V
CE
= -20V, I
C
= -10mA, f = 100MHz 250 MHz
C
ob
Output Capacitance V
CB
= -5V, I
E
= 0, f = 1MHz 7.0 pF
C
ib
Input Capacitance V
EB
= -0.5V, I
C
= 0, f = 1MHz 15 pF
t
d
Delay Time V
CC
= -3V, I
C
= -10mA
I
B1
=- I
B2
= -1mA
35 ns
t
r
Rise Time 35 ns
t
s
Storage Time 225 ns
t
f
Fall Time 75 ns
SOT-523F
Marking : A06
B
C
E